HIGH-SPEED MOS MEMORY

被引：0
|
作者：
IEDA, N
YOSHIMURA, H
ASAOKA, T
机构：
[1] NIPPON TELEG & TEL PUBL CORP, RES DEV BUR, MUSASHINO, JAPAN
[2] ELECT COMMUN LAB, PLANNING & COORDINATION OFF, MUSASHINO, JAPAN
[3] ELECT COMMUN LAB, INTEGRATED ELECTR DEV DIV, SOLID STATE EQUIPMENT SECT, MUSASCHINO, JAPAN
来源：
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 1973年 / 21卷 / 7-8期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：473 / 481
页数：9
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