QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT

被引：3

作者：

KROGER, FA

FAIR, RB

TSAI, JCC

机构：

[1] UNIV SO CALIF, DEPT MAT SCI & ELECT ENGN & CHEM, LOS ANGELES, CA 90007 USA

[2] BELL TEL LABS INC, READING, PA 19604 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 06期

关键词：

D O I：

10.1149/1.2131608

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：995 / 998

页数：4

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