QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT

被引：3
|
作者：
KROGER, FA
FAIR, RB
TSAI, JCC
机构：
[1] UNIV SO CALIF, DEPT MAT SCI & ELECT ENGN & CHEM, LOS ANGELES, CA 90007 USA
[2] BELL TEL LABS INC, READING, PA 19604 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 06期
关键词：
D O I：
10.1149/1.2131608
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：995 / 998
页数：4
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