Negligible hysteresis of molybdenum disulfide field-effect transistors through thermal annealing

Large hysteresis behaviors on molybdenum disulfide (MoS2) field-effect transistors (FETs) without passivation have been typically observed, which can be one of the obstacles to understanding the intrinsic properties of MoS2 layers. Reported herein is the fact that the negligible hysteresis gap of MoS2 can be achieved through thermal annealing without any further passivation layer. The hysteresis gap of the MoS2 FETs with thermal annealing was reduced to 0.08 V, and the device showed good field-effect mobility (23.3 cm(2)/Vs) and a high on-to-off ratio (similar to 10(7)). The hysteresis-free MoS2 FETs were systematically investigated by analyzing both the contact property and the bias stability. Furthermore, low contact resistance (6.21 Omega cm) and excellent bias stability with a 1.29 x 10(8) sec relaxation time were obtained.