Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide

Complementary field-effect transistors-which have n-type and p-type field-effect transistors (FETs) vertically stacked on top of each other-can boost area efficiency in integrated circuits. However, silicon-based complementary FETs suffer from several issues, including difficulty in balancing electron and hole mobility. Here we report heterogeneous complementary FETs that combine p-type FETs made with silicon-on-insulator technology and n-type FETs made with two-dimensional molybdenum disulfide (MoS2). Through mobility matching and multiple-gate modulation of the MoS2, the mobility mismatch issue of fully silicon-based systems can be addressed. Our integration approach leverages the maturity of the silicon process, the low thermal budget of MoS2 and the low aspect ratio of the device structures to reduce process complexity and device degradation. We use the approach to create a complementary FET inverter that exhibits a voltage gain of 142.3 at a supply voltage of 3 V, and a voltage gain of 1.2 and power consumption of 64 pW at a supply voltage of 100 mV. We also develop a four-inch fabrication process for the silicon-two-dimensional complementary FETs.