ARSENIC DOPING OF EPITAXIAL GE GROWN ON GE AND GAAS SUBSTRATES

被引：0
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作者：
ETIENNE, D
ACHARGUI, N
BOUGNOT, G
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1986年 / 21卷 / 05期
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D O I：
10.1051/rphysap:01986002105029900
中图分类号：
O59 [应用物理学];
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页码：299 / 303
页数：5
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