Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates

被引：7
|
作者：
Dasilva, Yadira Arroyo Rojas [1 ]
Rossell, Marta D. [1 ]
Isa, Fabio [1 ,2 ]
Erni, Rolf [1 ]
Isella, Giovanni [3 ,4 ,5 ]
von Kanel, Hans [1 ,2 ]
Groning, Pierangelo [6 ]
机构：
[1] EMPA, Electron Microscopy Ctr, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
[2] ETH, Solid State Phys Lab, Otto Stern Weg 1, CH-8093 Zurich, Switzerland
[3] Politecn Milan, L NESS, Via Anzani 42, I-22100 Como, Italy
[4] Politecn Milan, Dept Phys, Via Anzani 42, I-22100 Como, Italy
[5] IFN CNR, Via Anzani 42, I-22100 Como, Italy
[6] EMPA, Dept Adv Mat & Surfaces, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
来源：
SCRIPTA MATERIALIA | 2017年 / 127卷
基金：
瑞士国家科学基金会;
关键词：
Dislocations; Stacking Faults; Twins; HAADF-STEM; Ge; MISFIT DISLOCATIONS; HETEROSTRUCTURES; LAYERS; FILMS;
D O I：
10.1016/j.scriptamat.2016.09.003
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper we report on the defects formed in Ge crystals grown on Si(001) pillars upon strain relaxation. The analysis is performed by high-angle annular dark-field scanning transmission electron microscopy. The strain relaxation happens by means of 60 and 90 misfit dislocations with Burgers vectors (b) over right arrow = 1/2 110 . Misfit dislocations may split forming partial dislocations with Burgers vectors (b) over right arrow = 1/6 112 , and are separated by a stacking fault. Besides, intrinsic stacking faults in different {111} planes interact and annihilate each other forming stair rod dislocations. Coherent and incoherent twin boundaries of the Sigma 3{111} and Sigma 3{112} types are also found in the Ge. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：169 / 172
页数：4
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