INGAAS/INP MODULATION-DOPED HETEROSTRUCTURES GROWN BY LPE

被引：0
|
作者：
SU, YK [1 ]
DAI, TA [1 ]
机构：
[1] NATL CHENG KUNG UNIV,INST ELECT & COMP ENGN,TAINAN,TAIWAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C577 / C577
页数：1
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