EFFECT OF THE INP DOPING DENSITY ON THE ELECTRICAL-PROPERTIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN LPE-GROWN MODULATION-DOPED HETEROSTRUCTURES

被引：0

作者：

SU, YK

DAI, TA

CHEN, SC

机构：

[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

D O I：

10.1016/0038-1101(88)90050-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：953 / 958

页数：6

共 50 条

[1] OBSERVATION OF 2-DIMENSIONAL ELECTRON-GAS IN LPE-GROWN GAINAS-INP HETEROSTRUCTURES
FRONC, K
GRABECKI, G
WROBEL, J
DIETL, T
GAJEWSKA, M
[J]. ACTA PHYSICA POLONICA A, 1991, 80 (03) : 449 - 452
[2] EFFECT OF SUBSTRATE ORIENTATION ON ELECTRICAL-PROPERTIES OF LPE-GROWN INP
AKITA, K
YAMAGUCHI, A
NAKAJIMA, K
TAKANOHASHI, T
[J]. ELECTRONICS LETTERS, 1981, 17 (24) : 921 - 922
[3] DENSITY OF TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED STRUCTURE WITH GRADED INTERFACE
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SHUR, MS
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 573 - 574
[4] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED INALAS-INGAAS HETEROSTRUCTURES
ONABE, K
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IDE, Y
[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 401 - 407
[5] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS
LEE, K
SHUR, M
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2093 - 2096
[6] PROPERTIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED GAINAS(P)/INP STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
GRUTZMACHER, D
MEYER, R
BALK, P
BERG, C
SCHAPERS, T
LUTH, H
ZACHAU, M
KOCH, F
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 697 - 703
[7] EFFECT OF SHALLOW AND DEEP DONORS ON THE EQUILIBRIUM ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN A MODULATION-DOPED FIELD-EFFECT TRANSISTOR
SUBRAMANIAN, S
VENGURLEKAR, AS
DIWAN, AA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 707 - 711
[8] Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures
Gökden, S
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (1-2): : 19 - 25
[9] EFFECT OF A GAAS BUFFER LAYER GROWN AT LOW SUBSTRATE TEMPERATURES ON A HIGH-ELECTRON-MOBILITY MODULATION-DOPED TWO-DIMENSIONAL ELECTRON-GAS
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MILLER, DC
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (10) : 943 - 945
[10] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS STRUCTURE FOR MODULATION-DOPED GAAS TRANSISTORS
CHRISTOU, A
VARMAZIS, K
HATZOPOULOS, Z
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 935 - 936

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