EFFECT OF THE INP DOPING DENSITY ON THE ELECTRICAL-PROPERTIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN LPE-GROWN MODULATION-DOPED HETEROSTRUCTURES

被引：0
|
作者：
SU, YK
DAI, TA
CHEN, SC
机构：
[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期
关键词：
D O I：
10.1016/0038-1101(88)90050-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
29
引用
收藏
页码：953 / 958
页数：6
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