IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING

被引：15

|

作者：

ISHIKAWA, T

OGASAWARA, K

NAKAMURA, T

KURODA, S

KONDO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1937 / 1940

页数：4

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