共 50 条
- [41] ANALYTICAL DESCRIPTION OF HIGH-ENERGY IMPLANTATION PROFILES OF BORON AND PHOSPHORUS INTO CRYSTALLINE SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 127 (3-4): : 385 - 395
- [44] Depth profile analysis and study of the electronic properties of silicon nitride layers produced by ion implantation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 113 (1-4): : 223 - 226
- [46] SYNTHESIS OF SILICON DIOXIDE LAYERS BY HIGH-DOSE ION-IMPLANTATION RADIATION EFFECTS LETTERS, 1984, 85 (02): : 67 - 74
- [47] Surface energy absorbing layers produced by ion implantation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 616 - 620
- [50] FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 858 - 863