POWER COMBINER PERFORMANCE OF GAAS-MESFET

被引：0

|

作者：

PUCEL, RA

机构：

来源：

MICROWAVE JOURNAL | 1980年 / 23卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：51 / &

相关论文

共 50 条

[21] PHOTOAVALANCHE EFFECTS IN A GAAS-MESFET
MADJAR, A
HERCZFELD, PR
PAOLLELA, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1990, 3 (02) : 60 - 62
[22] GAAS-MESFET FOR DIGITAL APPLICATION
KOHN, E
SOLID-STATE ELECTRONICS, 1977, 20 (01) : 29 - &
[23] NOVEL MICROWAVE MEDIUM POWER GAAS-MESFET WITH SCHOTTKY DRAIN
MEIGNANT, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1243 - 1244
[24] RADIATION EFFECTS ON DISTORTION CHARACTERISTICS OF POWER GAAS-MESFET AMPLIFIERS
MOGHE, SB
GUTMANN, RJ
BORREGO, JM
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1545 - 1550
[25] A HIGH-POWER GAAS-MESFET WITH AN EXPERIMENTALLY OPTIMIZED PATTERN
HIGASHISAKA, A
TAKAYAMA, Y
HASEGAWA, F
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1025 - 1029
[26] Reliability improvement of Al-gate power GaAs-MESFET
Kuroda, Masahiro
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 2000, 83 (07): : 22 - 30
[27] Reliability improvement of Al-gate power GaAs-MESFET
Kuroda, M
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2000, 83 (07): : 22 - 30
[28] ORIENTATION EFFECT ON PLANAR GAAS-MESFET
LEE, CP
ZUCCA, R
WELCH, BM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2196 - 2196
[29] DESIGN AND PERFORMANCE OF A DUAL-GATE GAAS-MESFET UPCONVERTER
DESALLES, AA
MICROWAVES & RF, 1983, 22 (05) : 101 - 101
[30] COMPLEMENTARY GAAS-MESFET LOGIC GATES
BAIER, SM
LEE, GY
CHUNG, HK
FURE, BJ
MACTAGGART, R
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 260 - 262

← 1 2 3 4 5 →