A HIGH-POWER GAAS-MESFET WITH AN EXPERIMENTALLY OPTIMIZED PATTERN

被引：19
|
作者：
HIGASHISAKA, A
TAKAYAMA, Y
HASEGAWA, F
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期
关键词：
D O I：
10.1109/T-ED.1980.19981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1025 / 1029
页数：5
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