A HIGH-POWER GAAS-MESFET WITH AN EXPERIMENTALLY OPTIMIZED PATTERN

被引：19
|
作者：
HIGASHISAKA, A
TAKAYAMA, Y
HASEGAWA, F
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期
关键词：
D O I：
10.1109/T-ED.1980.19981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1025 / 1029
页数：5
相关论文
共 50 条
  • [1] A HIGH ASPECT RATIO VIA HOLE DRY ETCHING TECHNOLOGY FOR HIGH-POWER GAAS-MESFET
    SUMITANI, K
    KOMARU, M
    KOBIKI, M
    HIGAKI, Y
    MITSUI, Y
    TAKANO, H
    NISHITANI, K
    [J]. GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 207 - 210
  • [2] POWER COMBINER PERFORMANCE OF GAAS-MESFET
    PUCEL, RA
    [J]. MICROWAVE JOURNAL, 1980, 23 (03) : 51 - &
  • [3] POWER LAW GAAS-MESFET MODEL
    CONGER, J
    SHUR, MS
    PECZALSKI, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2415 - 2417
  • [4] RADIATION EFFECTS ON POWER GAAS-MESFET AMPLIFIERS
    MOGHE, SB
    GUTMANN, RJ
    BORREGO, JM
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) : 1010 - 1013
  • [5] MONOLITHIC GAAS-MESFET POWER SENSOR MICROSYSTEM
    LALINSKY, T
    KUZMIK, J
    PORGES, M
    HASCIK, S
    MOZOLOVA, Z
    GRNO, L
    [J]. ELECTRONICS LETTERS, 1995, 31 (22) : 1914 - 1915
  • [6] PASSIVATION OF GAAS-MESFET
    ALNOT, P
    OLIVIER, J
    WYCZISK, F
    PERAY, JF
    [J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1986, 41 (231): : 185 - 186
  • [7] A COMPARISON OF THE GAAS-MESFET AND HBT FOR POWER MICROWAVE AMPLIFICATION
    LONG, SI
    [J]. 19TH EUROPEAN MICROWAVE CONFERENCE : MICROWAVE 89, 1989, : 219 - 224
  • [8] ANALYSIS AND UNDERSTANDING OF GAAS-MESFET BEHAVIOR IN POWER AMPLIFICATION
    CROSNIER, Y
    GERARD, H
    SALMER, G
    [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1987, 134 (01): : 7 - 16
  • [9] POWER GAAS-MESFET - RELIABILITY ASPECTS AND FAILURE MECHANISMS
    CANALI, C
    CASTALDO, F
    ZANONI, E
    [J]. MICROELECTRONICS AND RELIABILITY, 1984, 24 (05): : 947 - 955
  • [10] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
    FRENSLEY, WR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970
12345