RADIATION EFFECTS ON POWER GAAS-MESFET AMPLIFIERS

被引：0

作者：

MOGHE, SB ^{[1
]}

GUTMANN, RJ ^{[1
]}

BORREGO, JM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1010 / 1013

页数：4

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