GAAS-MESFET AMPLIFIERS FABRICATED ON INP SUBSTRATES

被引：0
|
作者：
JEONG, JC
VELLACOLEIRO, GP
YEE, CML
机构：
[1] AT'T Bell Laboratories, New Jersey 07974, Murray Hill
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 02期
关键词：
Amplifiers; Field effect devices; Semiconductor devices and materials;
D O I：
10.1049/el:19900092
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：135 / 136
页数：2
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