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RADIATION EFFECTS ON POWER GAAS-MESFET AMPLIFIERS

被引：0
|
作者：
MOGHE, SB [1 ]
GUTMANN, RJ [1 ]
BORREGO, JM [1 ]
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 01期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1010 / 1013
页数：4
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