A HIGH ASPECT RATIO VIA HOLE DRY ETCHING TECHNOLOGY FOR HIGH-POWER GAAS-MESFET

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作者：

SUMITANI, K

KOMARU, M

KOBIKI, M

HIGAKI, Y

MITSUI, Y

TAKANO, H

NISHITANI, K

机构：

来源：

GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989 | 1989年

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：207 / 210

页数：4

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