A HIGH ASPECT RATIO VIA HOLE DRY ETCHING TECHNOLOGY FOR HIGH-POWER GAAS-MESFET

被引：0
|
作者：
SUMITANI, K
KOMARU, M
KOBIKI, M
HIGAKI, Y
MITSUI, Y
TAKANO, H
NISHITANI, K
机构：
来源：
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989 | 1989年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：207 / 210
页数：4
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