CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO2/SI STRUCTURES WITH BIASING DURING ELECTRON-IRRADIATION

被引:15
|
作者
ROSENCHER, E
BOIS, D
机构
关键词
D O I
10.1063/1.93194
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:601 / 603
页数:3
相关论文
共 50 条
  • [21] SiO2 surface and SiO2/Si interface topography change by thermal oxidation
    Tokuda, N.
    Murata, M.
    Hojo, D.
    Yamabe, K.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 4763 - 4768
  • [22] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [23] Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures
    Afanas'ev, VV
    Stesmans, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) : G279 - G282
  • [24] Surface treatment effects on Si(111) and (100) surface structures and Si/SiO2 interface state
    Yamamoto, H
    Okumura, K
    Kanashima, T
    Okuyama, M
    THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 161 - 165
  • [25] Effect of laser irradiation on the structures properties such as SiO2/Si
    Veiko, V. P.
    Skvortsov, A. M.
    Sokolov, V. I.
    Pham Quang Tung
    Khalecki, R. A.
    Efimov, E. I.
    FUNDAMENTALS OF LASER-ASSISTED MICRO- AND NANOTECHNOLOGIES 2010, 2011, 7996
  • [26] INTERFACE STRUCTURES IN LATERAL SEEDING EPITAXIAL SI ON SIO2
    OGURA, A
    AIZAKI, N
    TERAO, H
    CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 361 - 366
  • [27] DEPENDENCE OF SIO2/SI INTERFACE STRUCTURES ON OXIDATION PROCESS
    HATTORI, T
    YAMAGISHI, H
    KOIKE, N
    IMAI, K
    YAMABE, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C136 - C136
  • [28] Discrete Electron States at the Si(100)/SiO2 Interface
    Kirillova S.I.
    Primachenko V.E.
    Serba A.A.
    Chernobai V.A.
    Russian Microelectronics, 2000, 29 (5) : 345 - 348
  • [29] Electron density profile at the interface of SiO2/Si(001)
    Banerjee, S.
    Ferrari, S.
    Piagge, R.
    Spadoni, S.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 17 - 20
  • [30] Generation of excess Si species at Si/SiO2 interface and their diffusion into SiO2 during Si thermal oxidation
    Ibano, Kenzo
    Itoh, Kohei M.
    Uematsua, Masashi
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (02)