HIGH-CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE

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作者：
FAIR, RB
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 03期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C95 / &
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