Hydrogenation of high-concentration arsenic-doped silicon using radio frequency hydrogen plasma

被引：0
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作者：
Yokota, Katsuhiro [1 ]
Hosokawa, Kouichi [1 ]
Terada, Kouichiro [1 ]
Hirai, Kiyohito [1 ]
Takano, Hiromichi [1 ]
Kumagai, Masao [1 ]
Ando, Yasunori [1 ]
Matsuda, Kouji [1 ]
机构：
[1] Kansai Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 7 A期
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页码：4355 / 4358
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