ACOUSTIC DEEP-LEVEL TRANSIENT SPECTROSCOPY OF MIS STRUCTURES

被引：10
|
作者：
BURY, P
JAMNICKY, I
DURCEK, J
机构：
[1] Department of Physics, Technical University of Transport and Communication
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1991年 / 126卷 / 01期
关键词：
D O I：
10.1002/pssa.2211260117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new method of determining and characterization of traps at the insulator-semiconductor interface is presented. This method, acoustic deep-level transient spectroscopy (A-DLTS), is based on the acoustoelectric response effect observed at the interface. A theoretical analysis of the acoustoelectric transient measurements in accordance to capacitance ones is also presented. The temperature dependence of the acoustoelectric response after bias voltage step application is investigated and the activation energies are calculated. Some other parameters of interface traps are also determined. The method is verified by the investigation of both, n- and p-type SiO2-Si interface states.
引用
收藏
页码：151 / 161
页数：11
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