DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ANISOTROPIC SEMICONDUCTOR GATE

被引：5
|
作者：
PAL, D
PAL, S
BOSE, DN
机构：
[1] Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur
来源：
BULLETIN OF MATERIALS SCIENCE | 1994年 / 17卷 / 04期
关键词：
GATE; DEEP LEVELS; ANISOTROPY;
D O I：
10.1007/BF02745221
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Deep level transient spectroscopy (DLTS) was carried out on single crystals of the layered chalcogenide p-GaTe using Schottky barriers parallel and perpendicular to the layer planes to study the possible anisotropy of the defect levels. Deep levels with the same energies (0.28 eV and 0.42-0.45 eV) have been found in both directions with concentrations ranging from 10(13)cm(-3) to 10(14)cm(-3) and capture cross-sections from 10(-15)cm(2) to 10(-17)cm(2). The difference in the spectra obtained from the two planes and the possible reason for the deep level energies being independent of crystal orientation are discussed.
引用
收藏
页码：347 / 354
页数：8
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