Growth of semi-polar (1-101) InGaN/GaN MQW structures on off 8 degrees off -axis (100) patterned Si substrate by MOVPE

被引：0

作者：

Han, Y. H. ^{[1
]}

Jeon, H. S. ^{[1
]}

Hong, S. H. ^{[1
]}

Kim, E. J. ^{[1
]}

Lee, A. R. ^{[1
]}

Kim, K. H. ^{[1
]}

Ahn, H. S. ^{[1
]}

Yang, M. ^{[1
]}

Tanikawa, T. ^{[2
]}

Honda, Y. ^{[2
]}

Yamaguchi, M. ^{[2
]}

Sawaki, N. ^{[2
]}

机构：

[1] Korea Maritime Univ, Dept Appl Sci, Busan 606791, South Korea

[2] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2009年 / 19卷 / 01期

关键词：

Si; non-polar; MOVPE; Metal organic vapor phase epitaxy; GaN; CL; MQW; Multi quantum well;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-101) GaN facet on 8-degree off oriented stripe patterned (100) Si substrates by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on NH3 flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of NH3 flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 rim depend on the growth conditions.

引用

页码：1 / 5

页数：5

共 23 条

[21] Growth of a-axial GaN core nanowires, semi-polar (1(1)over-bar01) GaN/InGaN multiple quantum well co-axial nanowires on Si substrate, and their carrier dynamics
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[22] Mg doping in (1(1)over-bar01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE
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[23] Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE
Honda, Y
Kameshiro, N
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Sawaki, N
JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) : 82 - 86

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