Mg doping in (1(1)over-bar01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE

被引：14

作者：

Hikosaka, Toshiki ^{[1
]}

Koide, Norikatsu ^{[1
]}

Honda, Yoshio ^{[1
]}

Yamaguchi, Masahito ^{[1
]}

Sawaki, Nobuhiko ^{[1
]}

机构：

[1] Nagoya Univ, Akasaki Res Ctr, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期

基金：

日本学术振兴会;

关键词：

doping; metal-organic vapor phase epitaxy; selective epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.10.229

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Mg doping was attempted in (1 (1) over bar 01)GaN grown on a patterned (001)Si by selective metal-organic vapor phase epitaxy (MOVPE). The source material for the Mg doping was EtCp2Mg and the electrical properties were studied on samples with different doping levels. All samples showed p-type conduction. However, the hole concentration was decreased by the Mg doping at low doping levels followed by an increase at high doping levels. The activation energy was around 106-130 meV depending on the doping level, which was larger than that found in undoped or carbon-doped samples. The AFM images showed gradual change in the surface structure in accordance with the Mg-doping level. The variation of the optical spectra was discussed in relation to the Mg-doping levels. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：207 / 210

页数：4

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