Mg doping in (1(1)over-bar01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE

被引：14
|
作者：
Hikosaka, Toshiki [1 ]
Koide, Norikatsu [1 ]
Honda, Yoshio [1 ]
Yamaguchi, Masahito [1 ]
Sawaki, Nobuhiko [1 ]
机构：
[1] Nagoya Univ, Akasaki Res Ctr, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期
基金：
日本学术振兴会;
关键词：
doping; metal-organic vapor phase epitaxy; selective epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2006.10.229
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Mg doping was attempted in (1 (1) over bar 01)GaN grown on a patterned (001)Si by selective metal-organic vapor phase epitaxy (MOVPE). The source material for the Mg doping was EtCp2Mg and the electrical properties were studied on samples with different doping levels. All samples showed p-type conduction. However, the hole concentration was decreased by the Mg doping at low doping levels followed by an increase at high doping levels. The activation energy was around 106-130 meV depending on the doping level, which was larger than that found in undoped or carbon-doped samples. The AFM images showed gradual change in the surface structure in accordance with the Mg-doping level. The variation of the optical spectra was discussed in relation to the Mg-doping levels. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：207 / 210
页数：4
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