TEMPERATURE-DEPENDENCE OF ELECTRON SATURATION VELOCITY IN GAAS

被引：7

作者：

ALLAM, R

PRIBETICH, J

机构：

[1] Centre hyperfrequences et Semiconducteurs, Universite des Sciences and Techniques de Lille, UA CNRS no. 287âBatiment P4, Flandres, Artois, Villeneuve d'Ascq

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Gallium arsenide; Semiconductor devices and materials; Thermal conductivity;

D O I：

10.1049/el:19900449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron saturation velocity is determined from the space charge resistance Rc and microwave impedance Zdof GaAs IMPATT diodes under linear conditions. Comparison between experimental measurement and theory is used in a large frequency bandwidth (2-18 GHz) at different temperatures (T≤500K). The results obtained are in good agreement with those of other authors. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：688 / 689

页数：2

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