TEMPERATURE-DEPENDENCE OF PEAK ELECTRON VELOCITY AND THRESHOLD FIELD MEASURED ON GAAS GUNN DIODES

被引：6

作者：

MOJZES, I

PODOR, B

BALOGH, I

机构：

[1] HUNGARIAN ACAD SCI,RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY

[2] TECH UNIV BUDAPEST,FAC ELECT ENGN,DEPT ELECTR DEVICES,H-1521 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1002/pssa.2210390253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K123 / K125

页数：3

共 50 条

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