TEMPERATURE-DEPENDENCE OF THE ELECTRON LANDE G-FACTOR IN GAAS

被引：110
|
作者：
OESTREICH, M
RUHLE, WW
机构：
[1] Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.74.2315
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temperature dependent frequency of quantum beats of free electron Larmor precession in bulk GaAs yields the temperature variation from 5 to 200 K of the Landé g factor with high accuracy. The Landé g factor increases from -0.44 to -0.38 to -0.35 as the temperature increases from 5 to 100 to 150 K. The experimental results are in the opposite direction than prediction by kp theory manifesting the need for appreciable, temperature dependent corrections of this band model. © 1995 The American Physical Society.
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页码：2315 / 2318
页数：4
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