共 50 条
- [21] HOP-CONDUCTION MAGNETORESISTANCE IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1967, 158 (03): : 794 - &
- [22] PHONON PART OF THE TRANSVERSE THERMOMAGNETIC NERNST EFFECT IN P-TYPE GERMANIUM [J]. SOVIET PHYSICS-SOLID STATE, 1960, 2 (05): : 761 - 765
- [23] HALL EFFECT AND MAGNETORESISTANCE IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1258 - 1258
- [24] ANISOTROPY OF HALL-EFFECT AND MAGNETORESISTANCE OF UNIAXIALLY DEFORMED P-TYPE GE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1554 - 1556
- [25] ANISOTROPY OF THE HALL EFFECT OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge. [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1554 - 1556
- [26] DC MAGNETORESISTANCE OF P-TYPE GERMANIUM IN HOP CONDUCTION RANGE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3042 - 3050
- [27] ODD MAGNETORESISTANCE OF P-TYPE GERMANIUM AT LOW-TEMPERATURES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1305 - 1306
- [29] DEPENDENCE OF TRANSVERSE HALL EFFECT IN P-TYPE SILICON ON MAGNETIC FIELD INTENSITY [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (06): : 1569 - &
- [30] Calculation of transverse magnetoresistance in isotropic p-type polycrystalline silicon [J]. EDM 2007: 8TH INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, 2007, : 129 - 130