SCANNING TUNNELING MICROSCOPY STUDIES OF SEMICONDUCTOR ELECTROCHEMISTRY

被引：45
|
作者：
THUNDAT, T
NAGAHARA, LA
LINDSAY, SM
机构：
[1] Department of Physics, Arizona state university, Tempe, Arizona
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.576383
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have used scanning tunneling microscopy to investigate topographical changes on potentiostatically controlled semiconductor surfaces due to electrochemical reactions. The electrochemical processes reported here include Ni deposition on Ge (111), localized photoelectrodeposition of gold on GaAs(100) surfaces, and photocorrosion of GaAs. We have also carried out x-ray photoelectron spectroscopy and secondary electron microscopy studies on samples that have been imaged with scanning tunneling microscopy. © 1990, American Vacuum Society. All rights reserved.
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页码：539 / 543
页数：5
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