共 50 条
- [3] Laser ultrasonic instrumentation for accurate temperature measurement of silicon wafers in rapid thermal processing systems [J]. RAPID THERMAL AND INTEGRATED PROCESSING VII, 1998, 525 : 135 - 140
- [6] Thermal behavior of large-diameter silicon wafers during high-temperature rapid thermal processing in single wafer furnace [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A): : 4442 - 4449
- [7] Thermal behavior of large-diameter silicon wafers during high-temperature rapid thermal processing in single wafer furnace [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (7 A): : 4442 - 4449
- [8] Temperature measurement issues in rapid thermal processing [J]. RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 : 3 - 15
- [9] Amplified spontaneous emission measurement of GaInNAs laser wafers with and without rapid thermal annealing [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B): : L1012 - L1014
- [10] The accurate modeling of the temperature response of semiconductor production wafers during rapid thermal processing [J]. 13TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2005, 2005, : 283 - 291