Amplified spontaneous emission measurement of GaInNAs laser wafers with and without rapid thermal annealing

被引：3
|
作者：
Nakatsuka, S [1 ]
Kondow, M [1 ]
Aoki, M [1 ]
Kudo, M [1 ]
Kitatani, T [1 ]
Tsuji, S [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 8B期
关键词：
GaInNAs; laser diode; amplified spontaneous emission; rapid thermal anneal;
D O I：
10.1143/JJAP.42.L1012
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The quality of a GaInNAs single-quantum-well heterostructure crystal for laser diodes grown by molecular beam epitaxy was estimated using amplified spontaneous emission (ASE) measurement. The effects of rapid thermal annealing (RTA) were also estimated. The ASE intensity was four times higher with RTA, which is consistent with the decrease in the threshold cur-rent of the laser diode. The slope of the ASE versus injection current density showed that a 40% non-radiative recombination remained even after RTA. Thus, non-radiative recombination is still a major problem in improving GaInNAs laser diodes.
引用
收藏
页码：L1012 / L1014
页数：3
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