Laser ultrasonic instrumentation for accurate temperature measurement of silicon wafers in rapid thermal processing systems

被引：6
|
作者：
Klimek, D [1 ]
Anthony, B [1 ]
Abbate, A [1 ]
Kotidis, P [1 ]
机构：
[1] MIT, Artificial Intelligence Lab, Cambridge, MA 02139 USA
来源：
RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷
关键词：
D O I：
10.1557/PROC-525-135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching +/- 1 degrees C (1 sigma) even with wafer thickness variation over a range of 2 to 3 percent.
引用
收藏
页码：135 / 140
页数：6
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