共 50 条
- [42] SURFACE RADIATIVE RECOMBINATION IN GAAS WITH SURPHON PARTICIPATION [J]. SURFACE SCIENCE, 1975, 50 (01) : 215 - 228
- [43] PASSIVATION OF GAAS SURFACE RECOMBINATION WITH ORGANIC THIOLS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2333 - 2336
- [44] INVESTIGATION OF SURFACE RECOMBINATION ON EPITAXIAL GAAS FILMS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01): : 53 - 62
- [45] Optical spectroscopy of InP and GaAs quantum dots. [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1998, 216 : U727 - U727
- [47] CARRIER RECOMBINATION IN GAAS IN CONDITIONS OF SURFACE GENERATION [J]. FIZIKA TVERDOGO TELA, 1972, 14 (08): : 2340 - +
- [48] SURFACE RECOMBINATION IN GAAS PN JUNCTION DIODE [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7509 - 7514
- [49] Optical properties of thin layers of GaAs strained to InP [J]. PHYSICA E, 1998, 2 (1-4): : 794 - 798
- [50] Optical properties of thin layers of GaAs strained to InP [J]. Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 794 - 798