Optical properties of thin layers of GaAs strained to InP

被引：4
|
作者：
Gerling, M [1 ]
Pistol, ME [1 ]
Seifert, W [1 ]
机构：
[1] Univ Lund, S-22100 Lund, Sweden
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词：
type II band structure; strain; hydrostatic pressure;
D O I：
10.1016/S1386-9477(98)00162-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single-strained layers of GaAs grown between InP barriers have been studied by photoluminescence with temperature and applied hydrostatic pressure as external perturbations. A type II band alignment at atmospheric pressure was found. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：794 / 798
页数：5
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