PHOTO-LUMINESCENCE FROM MG-IMPLANTED, EPITAXIAL, AND SEMI-INSULATING INP

被引：20

作者：

POMRENKE, GS ^{[1
]}

PARK, YS ^{[1
]}

HENGEHOLD, RL ^{[1
]}

机构：

[1] USAF,INST TECHNOL,AVIAT TRAINING COMMAND,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：969 / 977

页数：9

共 50 条

[1] PHOTO-LUMINESCENCE OF MG-IMPLANTED INP
POMRENKE, G
HENGEHOLD, RL
PARK, YS
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 462 - 462
[2] PHOTO-LUMINESCENCE STUDIES OF HE-4-IMPLANTED AND BE-9-IMPLANTED SEMI-INSULATING INP
OBERSTAR, JD
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5154 - 5162
[3] PHOTO-LUMINESCENCE STUDIES OF UNINTENTIONALLY DOPED SEMI-INSULATING GAAS
JOHNSON, EJ
KAFALAS, J
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 455 - 455
[4] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
TAJIMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229
[5] DEEP-LEVEL PHOTO-LUMINESCENCE IN ANNEALED SEMI-INSULATING GAAS
NAKASHIMA, H
MATSUNAGA, N
SHIRAKI, Y
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 203 - 208
[6] EFFECT OF OXYGEN IN PHOTO-LUMINESCENCE FROM CHROMIUM-DOPED SEMI-INSULATING GAAS
YU, PW
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1111 - 1114
[7] NONUNIFORM PHOTO-LUMINESCENCE INTENSITY DISTRIBUTION ON SEMI-INSULATING GAAS AND EFFECTS OF CR AND DISLOCATIONS
KITAHARA, K
OZEKI, M
SHIBATOMI, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 188 - 190
[8] PHOTO-LUMINESCENCE EVALUATION OF SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE
SWAMINATHAN, V
VONNEIDA, AR
CARUSO, R
YOUNG, MS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6471 - 6474
[9] PHOTO-LUMINESCENCE OF EPITAXIAL INP-YB FILMS
ZAKHARENKOV, LF
KASATKIN, VA
KESAMANLY, FP
SAMORUKOV, BE
SOKOLOVA, MA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 946 - 946
[10] ON THE REDISTRIBUTION OF IMPLANTED BE IN SEMI-INSULATING INP AFTER ANNEALING
MOLNAR, B
KELNER, G
MORRISON, GH
RAMSEYER, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C97 - C97

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