PHOTO-LUMINESCENCE STUDIES OF UNINTENTIONALLY DOPED SEMI-INSULATING GAAS

被引：0

作者：

JOHNSON, EJ ^{[1
]}

KAFALAS, J ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02154

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：455 / 455

页数：1

共 50 条

[1] EFFECT OF OXYGEN IN PHOTO-LUMINESCENCE FROM CHROMIUM-DOPED SEMI-INSULATING GAAS
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[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1111 - 1114
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229
[3] DEEP-LEVEL PHOTO-LUMINESCENCE IN ANNEALED SEMI-INSULATING GAAS
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[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 203 - 208
[4] NONUNIFORM PHOTO-LUMINESCENCE INTENSITY DISTRIBUTION ON SEMI-INSULATING GAAS AND EFFECTS OF CR AND DISLOCATIONS
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[5] PHOTO-LUMINESCENCE EVALUATION OF SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE
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[7] STUDY OF 0.8 EV DEEP LEVEL PHOTO-LUMINESCENCE IN UNDOPED LEC SEMI-INSULATING GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L541 - L543
[8] ONE-DIMENSIONAL PHOTO-LUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GAAS GROWN BY CZ AND HB METHODS
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