ELECTRONIC-STRUCTURE OF GE AND DIAMOND SCHOTTKY BARRIERS

被引：15

作者：

IHM, J ^{[1
]}

LOUIE, SG ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.18.4172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4172 / 4180

页数：9

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