THE ELECTRONIC-STRUCTURE OF GE SE AND GE TE COMPOUNDS

被引：12

作者：

OREILLY, EP ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 07期

关键词：

D O I：

10.1088/0022-3719/15/7/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1449 / 1455

页数：7

共 50 条

[1] PECULIARITIES OF ELECTRONIC-STRUCTURE OF GE-SE SUBSTITUTIONAL SOLUTION
SHVAIKO, VV
[J]. DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1975, (03): : 276 - 279
[2] ELECTRONIC-STRUCTURE OF GE SI SUPERLATTICES GROWN ON GE(001)
GULSEREN, O
CIRACI, S
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) : 638 - 641
[3] ELECTRONIC-STRUCTURE OF SN/GE SUPERLATTICES
MUNZAR, D
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1994, 49 (16): : 11238 - 11247
[4] THE ELECTRONIC-STRUCTURE OF SI/GE SUPERLATTICES
BASS, JM
MATTHAI, CC
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB209 - SB210
[5] VITRIFICATION IN THE GE-S-SE, GE-S-TE, AND GE-SE-TE SYSTEMS
MAKOVSKAYA, ZG
ZHUKOV, EG
[J]. INORGANIC MATERIALS, 1980, 16 (02) : 161 - 163
[6] ELECTRONIC-STRUCTURE OF TRIGONAL AND AMORPHOUS SE AND TE
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SCHLUTER, M
COHEN, ML
[J]. PHYSICAL REVIEW B, 1975, 11 (06): : 2186 - 2199
[7] Electronic structure of Ge-As-Te glasses
Lippens, PE
Jumas, JC
Olivier-Fourcade, J
Aldon, L
la Rocque, AGD
Sénémaud, C
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2000, 61 (11) : 1761 - 1767
[8] ELECTRONIC-STRUCTURE OF GE IN SIO2
HAGON, JP
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STONEHAM, AM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (25): : 4957 - 4962
[9] ELECTRONIC-STRUCTURE OF [111]SI/GE SUPERLATTICES
BASS, JM
MATTHAI, CC
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (38) : 7841 - 7846
[10] ELECTRONIC-STRUCTURE OF GE AND DIAMOND SCHOTTKY BARRIERS
IHM, J
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4172 - 4180

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