共 50 条
- [1] TEMPERATURE-DEPENDENCE OF PHOTO-CONDUCTIVITY IN P-TYPE COBALT DOPED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (02): : 170 - 170
- [2] TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY IN P-TYPE A-SI-H PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1991, 168 (01): : K19 - K21
- [3] TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF P-TYPE A-SI-H SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 878 - 879
- [6] INFLUENCE OF RADIATION DEFECTS ON THE TEMPERATURE-DEPENDENCE OF THE HALL-MOBILITY IN P-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1064 - 1066
- [7] TEMPERATURE-DEPENDENCE OF COBALT DONOR IN SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 404 - 404
- [9] TEMPERATURE-DEPENDENCE OF ANISOTROPY OF ELECTRON MOBILITY IN P-TYPE CDSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 642 - 644
- [10] TEMPERATURE-DEPENDENCE OF THE 1/F NOISE IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 578 - 579