OPTICALLY INDUCED CHARGE STORAGE IN ION-IMPLANTED SIO2

被引:4
|
作者
JACOBS, EP [1 ]
DORDA, G [1 ]
机构
[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER
关键词
D O I
10.1016/0038-1101(77)90123-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:367 / 372
页数:6
相关论文
共 50 条
  • [1] DIFFUSION OF ION-IMPLANTED AS IN SIO2
    VANOMMEN, AH
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2708 - 2715
  • [2] DIFFUSION OF ION-IMPLANTED GA IN SIO2
    VANOMMEN, AH
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1872 - 1879
  • [3] DIFFUSION OF ION-IMPLANTED IN AND TL IN SIO2
    VANOMMEN, AH
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5220 - 5225
  • [4] DIFFUSION OF ION-IMPLANTED SB IN SIO2
    VANOMMEN, AH
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 993 - 997
  • [5] Luminescence of isoelectronically ion-implanted SiO2 layers
    Salh, Roushdey
    Kourkoutis, L. Fitting
    Schmidt, B.
    Fitting, H.-J.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (09): : 3132 - 3144
  • [6] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2
    DEVINE, RAB
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565
  • [7] THE DIFFUSION OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SIO2
    SHACHAMDIAMOND, Y
    OLDHAM, WG
    KAZEROUNIAN, R
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (06) : 519 - 525
  • [8] Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2
    Giulian, R.
    Kluth, P.
    Johannessen, B.
    Araujo, L. L.
    Llewellyn, D. J.
    Cookson, D. J.
    Ridgway, M. C.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 33 - 36
  • [9] DEUTERIUM INTERACTIONS WITH ION-IMPLANTED SIO2 LAYERS IN SILICON
    MYERS, SM
    BROWN, GA
    REVESZ, AG
    HUGHES, HL
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2196 - 2206
  • [10] Range of ion-implanted rare earth elements in Si and SiO2
    Palmetshofer, L
    Gritsch, M
    Hobler, G
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3): : 83 - 85