SELF-ORGANIZATION OF STRAINED GAINAS MICROSTRUCTURES AN INP(311) SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引:0
|
作者
NOTZEL, R [1 ]
TEMMYO, J [1 ]
KOZEN, A [1 ]
TAMAMURA, T [1 ]
FUKUI, T [1 ]
HASEGAWA, H [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2525 / 2527
页数:3
相关论文
共 50 条
  • [41] CATHODOLUMINESCENCE OBSERVATION OF EXTENDED MONOLAYER FLAT TERRACES AT THE HETEROINTERFACE OF GAINAS/INP SINGLE QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    NILSSON, S
    GUSTAFSSON, A
    SAMUELSON, L
    APPLIED PHYSICS LETTERS, 1990, 57 (09) : 878 - 880
  • [42] Phase diagram for metalorganic vapor phase epitaxy of strained and unstrained InGaAsP/InP
    Kuphal, E
    Pocker, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 632 - 637
  • [43] HIGH-SPEED INP/GAINAS HETEROJUNCTION PHOTOTRANSISTOR ON INP-ON-SI GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    AINA, O
    SERIO, M
    MATTINGLY, M
    OCONNOR, J
    SHASTRY, SK
    HILL, DS
    SALERNO, JP
    FERM, P
    APPLIED PHYSICS LETTERS, 1991, 59 (03) : 268 - 270
  • [44] X-RAY-DIFFRACTION CHARACTERIZATION OF HIGHLY STRAINED INAS AND GAAS-LAYERS ON INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    LIU, Q
    LINDNER, A
    SCHEFFER, F
    PROST, W
    TEGUDE, FJ
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) : 2426 - 2433
  • [45] Thermodynamic study in GaN grown by metalorganic vapor-phase epitaxy
    Zhang, GY
    Tong, YZ
    Jin, SX
    Dang, XZ
    Yang, ZJ
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 394 - 397
  • [46] INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HOFFMANN, A
    HEITZ, R
    LUMMER, B
    FRICKE, C
    KUTZER, V
    BROSER, I
    TAUDT, W
    GLEITSMANN, G
    HEUKEN, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 379 - 384
  • [47] Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
    Yasuda, K.
    Niraula, M.
    Kojima, M.
    Kitagawa, S.
    Tsubota, S.
    Yamaguchi, T.
    Ozawa, J.
    Agata, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (11) : 6704 - 6708
  • [48] Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic vapor-phase epitaxy
    Wu, J
    Yaguchi, H
    Onabe, K
    Ito, R
    Shiraki, Y
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 415 - 419
  • [49] Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
    K. Yasuda
    M. Niraula
    M. Kojima
    S. Kitagawa
    S. Tsubota
    T. Yamaguchi
    J. Ozawa
    Y. Agata
    Journal of Electronic Materials, 2017, 46 : 6704 - 6708
  • [50] STRAINED-LAYER INSB/GASB QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    QIAN, LQ
    WESSELS, BW
    APPLIED PHYSICS LETTERS, 1993, 63 (05) : 628 - 630