SELF-ORGANIZATION OF STRAINED GAINAS MICROSTRUCTURES AN INP(311) SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：0
|
作者：
NOTZEL, R [1 ]
TEMMYO, J [1 ]
KOZEN, A [1 ]
TAMAMURA, T [1 ]
FUKUI, T [1 ]
HASEGAWA, H [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2525 / 2527
页数：3
相关论文
共 50 条
  • [31] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    TAKAGI, Y
    YOSHIDA, A
    YONEZU, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C576 - C576
  • [32] Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
    Yasuda, K.
    Niraula, M.
    Namba, S.
    Kondo, T.
    Muramatsu, S.
    Yamashita, H.
    Wajima, Y.
    Agata, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3125 - 3128
  • [33] A STUDY OF HETEROEPITAXY OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    YOSHIDA, A
    YONEZU, H
    ITOH, N
    TAKAGI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : 2358 - 2361
  • [34] Cyclohexylphosphine: synthesis and application to metalorganic vapor-phase epitaxy of InP
    Franzheld, R
    Marschall, C
    Recker, C
    Wassermann, BC
    Schumann, H
    Benndorf, G
    Gottschalch, V
    JOURNAL OF CRYSTAL GROWTH, 1999, 206 (1-2) : 51 - 59
  • [35] GAASP LAYERS GROWN ON (111)-ORIENTED GAAS SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
    ZHANG, X
    KARAKI, K
    YAGUCHI, H
    ONABE, K
    SHIRAKI, Y
    ITO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (6A): : L755 - L757
  • [36] Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
    K. Yasuda
    M. Niraula
    S. Namba
    T. Kondo
    S. Muramatsu
    H. Yamashita
    Y. Wajima
    Y. Agata
    Journal of Electronic Materials, 2013, 42 : 3125 - 3128
  • [37] Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
    Taskinen, M
    Sopanen, M
    Lipsanen, H
    Tulkki, J
    Tuomi, T
    Ahopelto, J
    SURFACE SCIENCE, 1997, 376 (1-3) : 60 - 68
  • [38] GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy
    Chang, JR
    Su, YK
    Lin, CL
    Jaw, DH
    Lin, W
    JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) : 263 - 266
  • [39] INTERFACES OF INASP/INP MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    TRAN, CA
    GRAHAM, JT
    BREBNER, JL
    MASUT, RA
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (12) : 1291 - 1296
  • [40] Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy
    Decobert, J
    Patriarche, G
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 5749 - 5755
12345