AN INTERPRETATION OF QUANTITATIVE-ANALYSIS OF ARTHUR AND LEPORE FOR ALXGA1-XAS USING AES

被引：4
|
作者：
ICHIMURA, S
ARATAMA, M
SHIMIZU, R
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 01期
关键词：
D O I：
10.1116/1.570695
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：34 / 36
页数：3
相关论文
共 50 条
  • [21] Carbon implantation in AlxGa1-xAs
    Pearton, SJ
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1793 - 1795
  • [22] MAGNETOTUNNELING IN ALXGA1-XAS CAPACITORS
    HICKMOTT, TW
    PHYSICA B & C, 1985, 134 (1-3): : 3 - 11
  • [23] PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS
    PAVESI, L
    GUZZI, M
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 4779 - 4842
  • [24] PHONONS IN ALXGA1-XAS ALLOYS
    KOBAYASHI, A
    DOW, JD
    OREILLY, EP
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (06) : 471 - 479
  • [25] VPE GROWTH OF ALXGA1-XAS
    STRINGFELLOW, GB
    HALL, HT
    JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) : 47 - 60
  • [26] Carbon implantation in AlxGa1-xAs
    Pearton, SJ
    Abernathy, CR
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 789 - 794
  • [27] AES AND XPS STUDIES OF SURFACE OF ALXGA1-XAS (110) TREATED BY AMMONIUM SULFIDE
    OHNO, H
    KAWANISHI, H
    AKAGI, Y
    NAKAJIMA, Y
    HIJIKATA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (11): : 2473 - 2476
  • [28] MONTE-CARLO STUDY OF GAAS/ALXGA1-XAS MODFETS - EFFECTS OF ALXGA1-XAS COMPOSITION
    KIZILYALLI, IC
    ARTAKI, M
    CHANDRA, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 197 - 206
  • [29] 高组份Al值的AlxGa1-xAs和AlxGa1-xAs/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长
    高鸿楷
    云峰
    张济康
    龚平
    候洵
    高速摄影与光子学, 1991, (02) : 151 - 158
  • [30] Concentration-size dependences for the electron energy in AlxGa1-xAs/GaAs/AlxGa1-xAs nanofilms
    Kondryuk, D. V.
    Kramar, V. M.
    Kroitor, O. P.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2014, 17 (02) : 160 - 164
12345