THERMAL INTERDIFFUSION IN INGAAS GAAS AND GAASSB GAAS STRAINED QUANTUM-WELLS AS A FUNCTION OF DOPING DENSITY

We studied the thermal stability and interdiffusion of InGaAs/GaAs and GaAsSb/GaAs single quantum wells as a function of temperature for both Be and Si doping at various doping concentrations. The interdiffusion was monitored using the photoluminescence from the ground states of the valence- and conduction-band quantum wells. Using a Green's function method to solve the diffusion equation, assuming Fick's law behaviour, the evolution of the well shape during annealing was determined, and Schrodinger's equation was solved for this well shape to provide the ground-state energy levels of the system using the diffusion constant as the only fitting parameter. The validity of this model as applied to both systems is discussed.