HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS

Low-resistivity p-type GaN films, which were obtained by N2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1 x 10(6) OMEGA . cm after NH3-ambient thermal annealing at temperatures above 600-degrees-C. In the case of N2-ambient thermal annealing at temperatures between room temperature and 1000-degrees-C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2-OMEGA . cm and 8-OMEGA . cm. These results indicate that atomic hydrogen produced by NH3 dissociation at temperatures above 400-degrees-C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.