BROMINE DOPING OF CDTE AND CDMNTE EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14
|
作者：
WAAG, A [1 ]
SCHOLL, S [1 ]
VONSCHIERSTEDT, K [1 ]
HOMMEL, D [1 ]
LANDWEHR, G [1 ]
BILGER, G [1 ]
机构：
[1] ZENTRUM SONNENENERGIE & WASSERSTOFF FORSCH,W-7000 STUTTGART,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 129卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90454-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the n-type doping of CdTe and CdMnTe with bromine as a novel dopant material. The thin films were grown by molecular beam epitaxy. ZnBr2 was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8 X 10(18) cm-3 could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr2 source temperatures up to 60-degrees-C - corresponding to a free carrier concentration of (2-3) X 10(18) cm-3 - the free carrier concentration of the epitaxial films increases with ZnBr2 source temperature. For higher ZnBr2 source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr2 source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed.
引用
收藏
页码：243 / 248
页数：6
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