OPTICALLY-COUPLED MIRROR QUANTUM-WELL INGAAS-GAAS LIGHT-EMITTING DIODE

被引：32
|
作者：
DEPPE, DG
CAMPBELL, JC
KUCHIBHOTLA, R
ROGERS, TJ
STREETMAN, BG
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas, Austin
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 20期
关键词：
Light emitting diodes; Semiconductor devices and materials;
D O I：
10.1049/el:19901066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Data are presented showing that it is possible to optically couple a semiconductor quantum well to a mirror, and thus influence its spontaneous emission lifetime, for mirror to quantum well spacings of less than an optical wavelength. Light emitting diodes with various mirror to quantum well spacings corresponding to quantum well placement at either interference nodes or antinodes are characterised in terms of light output efficiency and frequency response. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1665 / 1666
页数：2
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